Bipolar junction transistors bjt and fieldeffect transistorsfet. Nchannel jfet depletion mode qualified per milprf19500375 devices qualified level 2n3821 2n3822 2n3823 jantx jantxv maximum ratings parameters test conditions symbol 2n3821 2n3822 2n3823 unit gate source voltage v gsr 50 30 v drain source voltage v ds 50 30 v drain gate voltage v dg 50 30 v. The characteristics and approximate specifications of 2n series discrete transistors are generally the same between different manufacturers when trying to decide which transistor you need, take into consideration the following. High gainbandwidth product charac teristic provides excellent performance in a variety of small signal and linear amplifier applications, 1a a r b a style 1 d0 2 1003. Silicon offers good overall performance with a base emitter junction turn on voltage of around 0. The 2n3819 is a lowcost, allpurpose jfet which offers good performance at midtohigh frequencies.
For possible replacements or substitutions, please check the dropdown box below for a list of related items to view more products in this category. Typical parameters which may be provided in scillc data sheets andor specifications can and do vary in different applications and actual performance may. The 2n32 is an rca pointcontact transistor in a singleended package that has all leads emerging from the same end. Category, discrete transistors fets field effect transistors jfets junction. The 2n3819 is a nchannel rf amplifier transistor designed for rf amplifier and mixer applications operating up to 450mhz, and for analog switching requiring low capacitance. This parameter is the collector to base breakdown voltage of a bipolar transistor. Nte electronics 2n3819 nchannel rf amplifier transistor. Bjts have 3 terminals and come in two varieties, as npn and pnp transistors. Bf245 bf245b jfet nchannel transistor taydaelectronics. Nchannel jfet, 2n3819 datasheet, 2n3819 circuit, 2n3819 data sheet. It is the maximum collector base voltage again it is generally measured with the emitter left open circuit. Epitaxial planar npn description the 2n1711 is a silicon planar epitaxial npn transistor in jedec to39 metal case.
A1, december 2002 2n3819 epitaxial silicon transistor absolute maximum ratings tc25c unless otherwise noted this ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Id say compare datasheet specs to find something that looks close, or order a bunch. Guide to 2n series transistors approximate specs and characteristics. Nte electronics 2n3819 nchannel rf amplifier transistor, 2.
Bipolar power transistor selection guide january 2003 table of contents product page general purpose transistors horizontal deflection output transistors product page dpak d2pak sot223 ipak to126 todarlington transistors dpak ipak to126 to220 to220f to3p to3pf switching transistors dpak d2pak to92 to126. This site uses cookies to deliver our services and provide a basic level of website functionality. Philips, alldatasheet, datasheet, datasheet search site for electronic components and. Bfy50 bfy51 vcbo collectorbase voltage ie 0 80 60 v vceo collectoremitter voltage ib 0 35 30 v vebo emitterbase voltage ic 0 6 v ic collector current 1 a icm collector peak current tp sheet, datasheet, data sheet, pdf, central semiconductor, leaded jfet general purpose. Absolute maximum ratings t c 25c unless otherwise noted.
Elektronische bauelemente npn plastic encapsulated. Toshiba power transistor semiconductor data book 1983 toshiba corporation 1983 acrobat 7 pdf 52. Id say compare datasheet specs to find something that looks close, or order a bunch of different ones from a place like digikey and just try and see what works or not. Bipolar power transistor selection guide january 2003 table of contents product page general purpose transistors horizontal deflection output transistors product page dpak d2pak sot223 ipak to126 todarlington transistors dpak ipak to126 to220 to220f to3p to3pf switching transistors dpak d2pak to92 to126 to220 to220f to3p to3pf 2. Power dissipation 25c dc current gain hfe 4 a vce sat 1. It is intented for use in high performance amplifier, oscillator and switching circuits. The leads were anchored in a small glass block, allowing the transistor to be constructed above it, and then the whole upper part was sealed in a white epoxy block. If a mica insulation is used, the thermal resistance of the mica washer must be added, which amounts to about 0. Its to226aa to92 package is compatible with various tapeandreel options for automated assembly see packaging information.
Description the device is a silicon npn overlay transistor in a to39 metal package with the collector connected to the case. Fairchild semiconductor 2n3819 2n3819 field effect transistor rf amplifier, nchannel type, 25v drainsource breakdown voltage, 50ma drain current, 25v. Pinning to393 pin description 1 emitter 2 base 3 collector fig. Fairchild semiconductor 2n3819 2n3819 field effect transistor rf amplifier, nchannel type, 25v drainsource breakdown voltage, 50ma drain current, 25v javascript is currently disabled in your browser, please turn it on to avoid loss of functionality. Transistor specifications explained electronics notes. Free packages are available maximum ratings rating symbol value unit collector. Mpf102 jfet j310 replacement mpf102 replacement j210 replacement 2n3819 cross reference mpf102 jfet data sheet 2n5485 mpf102 j305 replacement j300 replacement text.
J201s get a lot of love for boostclipping applications in dirt pedals. Directions for determining the thermal resistance rths for cooling fins can be found on page 11. Toshiba power transistor semiconductor data book 1983. Nchannel jfet designed for rf amplifier and mixer applications. Transistors peter mathys ecen 1400 transistor families there are two major families of transistors. Elektronische bauelemente npn plastic encapsulated transistor. Description, transistor polarity n channel gfs min 2 mav gfs max 6. The 2n1711 is also used to advantage in amplifiers where low noise is an important factor. N stands for ntype material and p stands for ptype material. This fet is only operating as a dc amplifier, and the 2n3819 and other. Transistor 2n3819 transistor 1800rfparts 18007372787 17607440700 usa orders. Bipolar power transistor selection guide mouser electronics. Since the distribution of heat in the transistor crystal is not uniform and depends on voltage and. Pricing and availability on millions of electronic components from digikey electronics.